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DISCRETE SEMICONDUCTORS
M3D124
BFG480W NPN wideband transistor
Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 1998 Jul 09
Philips Semiconductors
Preliminary specification
NPN wideband transistor
FEATURES * High power gain * High efficiency * Low noise figure * High transition frequency * Emitter is thermal lead * Low feedback capacitance * Linear and non-linear operation. APPLICATIONS * RF front end with high linearity system demands (CDMA) * Common emitter class AB driver.
2 1
MSB842
BFG480W
PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION
handbook, halfpage
3
4
DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
Top view
Marking code: P6.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Gmax F GP C PARAMETER collector-emitter voltage open base collector current (DC) total power dissipation transition frequency maximum gain noise figure power gain collector efficiency Ts 60 C CONDITIONS MIN. - - - IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C - IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C - IC = 8 mA; VCE = 2 V; f = 2 GHz; S = opt Pulsed; class-AB; < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW Pulsed; class-AB; < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. - 12 40 TYP. - 80 - 23 16 1.8 - - MAX. 4.5 250 360 - - - - - UNIT V mA mW GHz dB dB dB %
1998 Jul 09
2
Philips Semiconductors
Preliminary specification
NPN wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 250 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 60 C; note 1; see Fig.2 open base open collector CONDITIONS open emitter - - - - - -65 - MIN.
BFG480W
MAX. 14.5 4.5 1 250 360 +150 150 V V V
UNIT
mA mW C C
UNIT K/W
500 Ptot (mW) 400
300
200
100
0 0 40 80 120 TS (C) 160
Fig.2 Power derating curve.
1998 Jul 09
3
Philips Semiconductors
Preliminary specification
NPN wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Ce Cre fT Gmax S 21 F
2
BFG480W
PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum power gain; note 1 insertion power gain noise figure
CONDITIONS IC = 50 A; IE = 0 IE = 100 A VCE = 5 V; VBE = 0 IC = 80 mA; VCE = 2 V; see Fig.3 IE = ie = 0; VCB = 2 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.5 IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Figs 7 and 8 IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.8 IC = 8 mA; VCE = 2 V; f = 900 MHz; S = opt; see Fig.13 IC = 8 mA; VCE = 2 V; f = 2 GHz; S = opt; see Fig.13
MIN. 14.5 4.5 1 - 40 - - - - - - - - - -
TYP. - - - - 60 1.4 2.3 350 23 16 12 1.2 1.8 20 28
MAX. - - - 70 100 - - - - - - - - - -
UNIT V V V nA pF pF fF GHz dB dB dB dB dBm dBm
collector-emitter breakdown voltage IC = 5 mA; IB = 0
PL1 ITO Notes
output power at 1 dB gain compression third order intercept point
Class-AB; < 1 : 2; tp = 5 ms; VCE = 3.6 V; ICQ = 1 mA; f = 2 GHz IC = 80 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain.
1998 Jul 09
4
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
100
800 Cre (pF)
hFE
80
600
60 400 40
200 20
0 0 50 100 IC (mA) 150
0 0 1 2 3 4 V CB (V) 5
VCE = 2 V.
IC = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
30
30 gain (dB) MSG Gmax S21
fT
(GHz)
20
20
10
10
0 10 100 IC (mA) 1000
0 0 40 80 120 IC (mA) 160
f = 2 GHz; VCE = 2 V; Tamb = 25 C.
f = 900 MHz; VCE = 2 V.
Fig.5
Transition frequency as a function of collector current; typical values.
Fig.6
Gain as a function of collector current; typical values.
1998 Jul 09
5
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
20 gain (dB) 16 S 21 12 Gmax
50 gain (dB) 40 MSG S 21
30
Gmax 8 20
4
10
0 0 40 80 120 IC (mA) 160
0 10 100 1000 f (MHz) 10000
VCE = 2 V; f = 2 GHz.
IC = 80 mA; VCE = 2 V.
Fig.7
Gain as a function of collector current; typical values.
Fig.8
Gain as a function of frequency; typical values.
1998 Jul 09
6
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
90 +1 135 +0.5 45 +2 1.0 0.8 0.6 3GHz +0.2 +5 0.2 0 180 0.2 0.5 1 2 5 0 0 0.4
40MHz -5 -0.2
-135
-0.5 -1 -90
-2
-45
1.0
IC = 80 mA; VCE = 2 V; Zo = 50 .
Fig.9 Common emitter input reflection coefficient (S11); typical values.
90
135
45
40MHz 180 25 20 15 10 5 3GHz 0
-135
-45
-90
IC = 80 mA; VCE = 2 V.
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
1998 Jul 09
7
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
90
135
45
3GHz
180
0.5
0.4
0.3
0.2
0.1 40MHz
0
-135
-45
-90
IC = 80 mA; VCE = 2 V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
90 +1 135 +0.5 45 +2 1.0 0.8 0.6 +0.2 +5 3GHz 0 180 0.2 0.5 1 2 5 0 0.2 0 0.4
40MHz -5 -0.2
-135
-0.5 -1 -90
-2
-45
1.0
IC = 80 mA; VCE = 2 V; Zo = 50 .
Fig.12 Common emitter output reflection coefficient (S22); typical values.
1998 Jul 09
8
Philips Semiconductors
Preliminary specification
NPN wideband transistor
Noise data VCE = 2 V; typical values. f (MHz) 900 IC (mA) 2 4 6 8 10 20 40 60 80 2000 2 4 6 8 10 12 14 20 40 60 80 Fmin (dB) 1.1 1.1 1.2 1.2 1.3 1.6 2.0 2.3 2.9 2.4 2.0 1.8 1.8 1.8 1.8 1.8 1.9 2.3 2.6 2.8 mag 0.41 0.31 0.27 0.26 0.28 0.39 0.49 0.57 0.45 0.57 0.49 0.46 0.44 0.43 0.44 0.44 0.46 0.52 0.56 0.60 angle 96.1 106.6 118.4 131.7 143.2 166.2 176.0 179.5 177.3 171.9 178.9 -175.7 -171.7 -168.4 -165.3 -163.7 -158.3 -150.2 -147.7 -146.1 rn () 0.21 0.14 0.12 0.10 0.10 0.07 0.07 0.07 0.18 0.09 0.08 0.09 0.09 0.09 0.10 0.10 0.11 0.14 0.18 0.22
VCE = 2 V.
0 0 20 40 1 2 3 4 Fmin (dB)
BFG480W
2 GHz 900MHz
60 IC (mA)
80
Fig.13 Minimum noise figure as a function of the collector current; typical values.
APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see Figs 18 and 19). MODE OF OPERATION Pulsed; class-AB; < 1 : 2; tp = 5 ms f (GHz) 2 VCE (V) 3.6 ICQ (mA) 1 PL (mW) 100 Gp (dB) typ. 13.5 C (%) typ. 45
1998 Jul 09
9
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
16 GP (dB) GP 12
80
C
(%) 60
handbook, halfpage
16
MGL456
80
GP (dB) GP 12
C (%)
60
C
8 40
8
40
4
20
C
4 20
0 10 14 18 22 PL (dBm) 26
0
0 10 14 18 22 26 PL (dBm)
0
Pulsed, class-AB operation; < 1 ; 2; tp = 5 ms. f = 2 GHz; VCE = 2.4 V; ICQ = 1 mA; tuned at PL = 100 mW.
Pulsed, class-AB operation; < 1 ; 2; tp = 5 ms. f = 2 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 100 mW.
Fig.14 Power gain and collector efficiency as a function of the load power; typical values.
Fig.15 Power gain and collector efficiency as a function of the load power; typical values.
10 Zi () 8
30
ri
ZL ()
RL
20 6
4 10 2
xi
XL
0 1.8 1.85 1.9 1.95 f (GHz) 2
0 1.8 1.85 1.9 1.95 f (GHz) 2
VCE = 3.6 V; ICQ = 1 mA; PL = 100 mW; Ts 60 C.
VCE = 3.6 V; ICQ = 1 mA; PL = 100 mW; Ts 60 C.
Fig.16 Input impedance as function of frequency (series components); typical values.
Fig.17 Load impedance as a function of frequency (series components); typical values.
1998 Jul 09
10
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
handbook, full pagewidth
VC R1 R2
VS
L5 R3 C7
TR1 C3
C6
L4 L1 RF input 50 C1 C2 L2 DUT C4
MGM221
L3
C5
RF output 50
Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.
List of components used in test circuit (see Figs 18 and 19) COMPONENT C1, C5 C2, C4 C3, C6 C7 L1, L4 L2 L3 L5 R1 R2, R3 TR1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15, tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor, note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 Grade 4S2 Ferroxcube chip bead metal film resistor metal film resistor NPN transistor 220 ; 0.4 W 10 ; 0.4 W BC817 9335 895 20215 2 pF 15 pF 1 nF 100 50 50 18 x 0.2 mm 5 x 0.8 mm 6 x 0.8 mm 4330 030 36300 VALUE 24 pF DIMENSIONS CATALOGUE No.
1998 Jul 09
11
Philips Semiconductors
Preliminary specification
NPN wideband transistor
BFG480W
handbook, full pagewidth
45
35
VC TR1 R2 R1
VS
L5 R3 C7 C6 L1 L4 C5 L3 DUT C4 output
C3
C1 C2
L2
input
MBK827
Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.19 Printed-circuit board and component lay-out for 2 GHz class-AB test circuit in Fig.18.
1998 Jul 09
12
Philips Semiconductors
Preliminary specification
NPN wideband transistor
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
BFG480W
SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1998 Jul 09
13
Philips Semiconductors
Preliminary specification
NPN wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG480W
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jul 09
14
Philips Semiconductors
Preliminary specification
NPN wideband transistor
NOTES
BFG480W
1998 Jul 09
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/02/pp16
Date of release: 1998 Jul 09
Document order number:
9397 750 04075

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